Carrier decay process of nanoscaled SiGe particles embedded in SiO2 matrix

Abstract: Nanoscaled SiGe particles (NPs) are formed by ions implantation and annealing treatment methods. For any sample, the total dose of Si and Ge dopants is 3×1016 cm−2. Strong photoluminescence (PL) peaks centered around red emission region are observed. This PL peak red shifts from 653nm–695nm with the increase of Ge-doping dose, which is ascribed to the quantum confinement effect. The PL lifetime spectra exhibit a stretched exponential decay with characteristic decay time τ varying from 50.2–23.1μs and dispersion factor β in the range of 0.67–0.86. [Copyright &y& Elsevier]