Two-level fluctuations of in-plane current in a narrow lateral n-i-n junction.

Authors :: Takagaki, Y.
Yuba, Y.
Gamo, K.
Namba, S.
Takaoka, S.
Murase, K.
Source :: Journal of Applied Physics. 9/15/1990, Vol. 68 Issue 6, p2813. 4p. 3 Diagrams, 1 Chart, 2 Graphs.
Publication Year :: 1990
Abstract: Examines in-plane current through lateral n-i-n junction in gallium arsenide-aluminum-gallium-arsenic heterostructure at low temperature. Nucleation and annihilation of current filament; Fabrication step used for the side-gate transistors; Relationship of the increase in bias and the noisy current.