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ZnSe p-n junctions produced by metalorganic molecular-beam epitaxy.

Authors :
Migita, M.
Taike, A.
Yamamoto, H.
Source :
Journal of Applied Physics. 7/15/1990, Vol. 68 Issue 2, p880. 3p. 1 Chart, 4 Graphs.
Publication Year :
1990

Abstract

Presents a study which fabricated p-n junction in nitrogen-doped p-type zinc selenide/undoped n-type zinc selenide on n-type gallium arsenide. Utilization of metalorganic molecular-beam epitaxy; Formation of a zinc selenide p-n junction; Emission observed from the p-n junction.

Subjects

Subjects :
*ZINC selenide
*GALLIUM arsenide
*SEMICONDUCTOR junctions
*MOLECULAR beam epitaxy

Details

Language :
English
ISSN :
00218979
Volume :
68
Issue :
2
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7669434
Full Text :
https://doi.org/10.1063/1.346777
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