Gate dielectric-dependent flicker noise in metal-oxide-semiconductor transistors.

Presents the low-frequency noise measurements on n-channel metal-oxide-semiconductor (MOS) transistors with trichoroethylene, dry, thermally nitrided, or reoxidized nitrided oxides as gate dielectrics. Devices used in the experiment; Nitridation of as-grown oxide; Plot of total oxide-trap density and frequency index of noise spectrum versus gate vias for MOS transistor with gate oxide grown by dry oxidation.