Back to Search Start Over

The measurement of boron at silicon wafer surfaces by neutron depth profiling.

Authors :
Downing, R. G.
Lavine, J. P.
Hossain, T. Z.
Russell, J. B.
Zenner, G. P.
Source :
Journal of Applied Physics. 4/15/1990, Vol. 67 Issue 8, p3652. 3p. 6 Graphs.
Publication Year :
1990

Abstract

Presents a study which measured the boron concentration on the surface of silicon wafers using thermal neutron depth profiling. Experimental details; Results and discussion; Conclusions.

Subjects

Subjects :
*BORON
*SILICON
*SEMICONDUCTOR wafers
*THERMAL neutrons

Details

Language :
English
ISSN :
00218979
Volume :
67
Issue :
8
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7669125
Full Text :
https://doi.org/10.1063/1.345319
Full Text Access
View/download PDF

Tools

Authors Abstract Subjects Details