Deep level transient spectroscopy analysis of fast ion tracks in silicon.

Authors :: Hallén, A.
Sundqvist, B. U. R.
Paska, Z.
Svensson, B. G.
Rosling, M.
Tirén, J.
Source :: Journal of Applied Physics. 2/1/1990, Vol. 67 Issue 3, p1266. 6p. 1 Diagram, 1 Chart, 6 Graphs.
Publication Year :: 1990
Abstract: Presents a study that examined deep level transient spectroscopy measurements of electron traps in irradiated n-type silicon. Analysis of the depth concentration profiles of the samples; Examination of the dose dependence of the defects; Methodology.