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Deep level transient spectroscopy analysis of fast ion tracks in silicon.
- Source :
-
Journal of Applied Physics . 2/1/1990, Vol. 67 Issue 3, p1266. 6p. 1 Diagram, 1 Chart, 6 Graphs. - Publication Year :
- 1990
-
Abstract
- Presents a study that examined deep level transient spectroscopy measurements of electron traps in irradiated n-type silicon. Analysis of the depth concentration profiles of the samples; Examination of the dose dependence of the defects; Methodology.
- Subjects :
- *SILICON
*DEEP level transient spectroscopy
*ELECTRONS
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 67
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7667907