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Deposition-rate reduction through improper substrate-to-electrode attachment in very-high-frequency deposition of a-Si:H.
Deposition-rate reduction through improper substrate-to-electrode attachment in very-high-frequency deposition of a-Si:H.
- Source :
-
Journal of Applied Physics . 9/15/1996, Vol. 80 Issue 6, p3546. 6p. - Publication Year :
- 1996
-
Abstract
- Focuses on a study which examined the major causes for nonuniformities in film thickness in large-area deposition of hydrogenated amorphous silicon. Information on the use of substrate-to-electrode attachment; Methodology of the study; Results and discussion.
- Subjects :
- *SILICON
*AMORPHOUS semiconductors
*ELECTRODES
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 80
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7664020
- Full Text :
- https://doi.org/10.1063/1.363227