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Deposition-rate reduction through improper substrate-to-electrode attachment in very-high-frequency deposition of a-Si:H.

Deposition-rate reduction through improper substrate-to-electrode attachment in very-high-frequency deposition of a-Si:H.

Authors :
Meiling, H.
van Sark, W. G. J. H. M.
Bezemer, J.
van der Weg, W. F.
Source :
Journal of Applied Physics. 9/15/1996, Vol. 80 Issue 6, p3546. 6p.
Publication Year :
1996

Abstract

Focuses on a study which examined the major causes for nonuniformities in film thickness in large-area deposition of hydrogenated amorphous silicon. Information on the use of substrate-to-electrode attachment; Methodology of the study; Results and discussion.

Details

Language :
English
ISSN :
00218979
Volume :
80
Issue :
6
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7664020
Full Text :
https://doi.org/10.1063/1.363227