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Photoreflectance temperature dependence of graded InAlAs/InGaAs heterojunction bipolar transistor layers.

Authors :
Chen, K. L.
Lin, H. H.
Jan, G. J.
Chen, Y. H.
Tseng, P. K.
Source :
Journal of Applied Physics. 9/15/1995, Vol. 78 Issue 6, p4035. 4p.
Publication Year :
1995

Abstract

Presents a study that examined photoreflectance temperature dependence of graded heterojunction bipolar transistor layers. Method of the study; Results and discussion; Conclusion.

Subjects

Subjects :
*REFLECTANCE
*BIPOLAR transistors

Details

Language :
English
ISSN :
00218979
Volume :
78
Issue :
6
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7663909
Full Text :
https://doi.org/10.1063/1.359927
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