Photothermal ionization identification of residual donors in high purity InP grown by gas source molecular beam epitaxy.

MLA

Shi, X. H., et al. “Photothermal Ionization Identification of Residual Donors in High Purity InP Grown by Gas Source Molecular Beam Epitaxy.” Journal of Applied Physics, vol. 80, no. 8, Oct. 1996, p. 4491. EBSCOhost, https://doi.org/10.1063/1.363410.

APA

Shi, X. H., Liu, P. L., Shen, S. C., Chen, J. X., Xin, H. P., & Li, A. Z. (1996). Photothermal ionization identification of residual donors in high purity InP grown by gas source molecular beam epitaxy. Journal of Applied Physics, 80(8), 4491. https://doi.org/10.1063/1.363410

Chicago

Shi, X. H., P. L. Liu, S. C. Shen, J. X. Chen, H. P. Xin, and A. Z. Li. 1996. “Photothermal Ionization Identification of Residual Donors in High Purity InP Grown by Gas Source Molecular Beam Epitaxy.” Journal of Applied Physics 80 (8): 4491. doi:10.1063/1.363410.