Photothermal ionization identification of residual donors in high purity InP grown by gas source molecular beam epitaxy.

Authors :: Shi, X. H.
Liu, P. L.
Shen, S. C.
Chen, J. X.
Xin, H. P.
Li, A. Z.
Source :: Journal of Applied Physics. 10/15/1996, Vol. 80 Issue 8, p4491. 4p. 1 Diagram, 8 Graphs.
Publication Year :: 1996
Abstract: Provides information on a study that reported results of photothermal ionization spectroscopy for the shallow impurities in the InP layer grown by gas source molecular beam epitaxy. Methodology of the study; Results and discussion on the study; Conclusion.

Subjects :: *SPECTRUM analysis
*LAYER structure (Solids)
*MOLECULAR beam epitaxy

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