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Raman study of the network disorder in sputtered and glow discharge a-Si:H films.
- Source :
-
Journal of Applied Physics . 10/15/1995, Vol. 78 Issue 8, p5120. 6p. - Publication Year :
- 1995
-
Abstract
- Presents information on a study which investigated the Raman spectra of hydrogenated amorphous silicon films produced by the glow discharge and radio frequency sputtering deposition techniques. Methods; Results; Discussion.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 78
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7663776
- Full Text :
- https://doi.org/10.1063/1.359743