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As precipitate redistribution in Si δ-doped low-temperature GaAs.
- Source :
-
Journal of Applied Physics . 11/15/1994, Vol. 76 Issue 10, p5697. 5p. 1 Black and White Photograph, 1 Diagram, 5 Graphs. - Publication Year :
- 1994
-
Abstract
- Focuses on a study which characterized the redistribution of arsenic precipitates in silicon δ-doped gallium arsenide through x-ray diffractometry and transmission electron microscopy. Experimental details; Results and discussion; Conclusion.
- Subjects :
- *ARSENIC
*GALLIUM arsenide
*TRANSMISSION electron microscopy
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 76
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7663582
- Full Text :
- https://doi.org/10.1063/1.357076