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Bonding structure and characteristics of defects of near-stoichiometric silicon nitride films.
- Source :
-
Journal of Applied Physics . 9/1/1996, Vol. 80 Issue 5, p2896. 8p. 10 Graphs. - Publication Year :
- 1996
-
Abstract
- Discusses a study which investigated the characteristics of defects in amorphous silicon nitride films subjected to ultraviolet illumination and anneal treatments. Background on the materials; Description of the experimental setup; Findings.
- Subjects :
- *SILICON nitride
*METALLIC films
*SURFACE defects
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 80
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7660513
- Full Text :
- https://doi.org/10.1063/1.363142