Microscopic photoluminescence characterization of 1.3-μm InAsP/InGaAsP strained multiquantum wells and laser diodes.

Authors :: Nakao, Masashi
Oohashi, Hiromi
Hirono, Takushi
Kamada, Hidehiko
Sugiura, Hideo
Source :: Journal of Applied Physics. 9/1/1995, Vol. 78 Issue 5, p3462. 5p.
Publication Year :: 1995
Abstract: Presents the results of a microscopic photoluminescence (PL) characterization of strained indium-arsenic-phosphorus/indium-gallium-arsenic-phosphorus multiquantum well crystals. PL intensity profile measurements of a laser diode cavity; Importance of semiconductor laser diodes in optical subscriber communication systems; Information on chemical beam epitaxy.

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