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Recombination rate saturation mechanisms at oxidized surfaces of high-efficiency silicon solar cells.
- Source :
-
Journal of Applied Physics . 10/1/1995, Vol. 78 Issue 7, p4740. 15p. 1 Diagram, 1 Chart, 8 Graphs. - Publication Year :
- 1995
-
Abstract
- Investigates the mechanism of recombination and its effect on cell performance using two-dimensional numerical computer simulations. Extent to which lateral conduction in the rear surface channel contributes to the observed recombination saturation in the cells; Factors contributed to the behavior of passivated emitter and rear locally diffused silicon solar cells; Overview of the electrostatic conditions.
- Subjects :
- *RECOMBINATION in semiconductors
*PASSIVITY (Chemistry)
*SOLAR cells
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 78
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7660245
- Full Text :
- https://doi.org/10.1063/1.359821