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Recombination rate saturation mechanisms at oxidized surfaces of high-efficiency silicon solar cells.

Authors :
Robinson, S. J.
Wenham, S. R.
Altermatt, P. P.
Aberle, A. G.
Heiser, G.
Green, M. A.
Source :
Journal of Applied Physics. 10/1/1995, Vol. 78 Issue 7, p4740. 15p. 1 Diagram, 1 Chart, 8 Graphs.
Publication Year :
1995

Abstract

Investigates the mechanism of recombination and its effect on cell performance using two-dimensional numerical computer simulations. Extent to which lateral conduction in the rear surface channel contributes to the observed recombination saturation in the cells; Factors contributed to the behavior of passivated emitter and rear locally diffused silicon solar cells; Overview of the electrostatic conditions.

Details

Language :
English
ISSN :
00218979
Volume :
78
Issue :
7
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7660245
Full Text :
https://doi.org/10.1063/1.359821