Photoreflectance study of Si delta-doped low-temperature GaAs grown by molecular beam epitaxy.

Investigates the surface electric field of silicon delta-doped GaAs grown by molecular beam epitaxy at a low substrate temperature using photoreflectance spectroscopy. Observations on Franz-Keldysh oscillations in the reflectance spectra; Explanation for the evolution of photoreflectance spectra; Use of photoreflectance in the study of semiconductors.