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Photoreflectance and photoluminescence spectroscopy of low-temperature GaAs grown by molecular-beam epitaxy.

Authors :
Sinha, S.
Arora, B. M.
Subramanian, S.
Source :
Journal of Applied Physics. 1/1/1996, Vol. 79 Issue 1, p427. 6p.
Publication Year :
1996

Abstract

Deals with a study which examined the photoreflectance and photoluminescence spectroscopy of low-temperature gallium arsenide grown by molecular-beam epitaxy. Information on modulation-doped photodectector structures; Methodology of the study; Results and discussion.

Details

Language :
English
ISSN :
00218979
Volume :
79
Issue :
1
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7659118
Full Text :
https://doi.org/10.1063/1.360848