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Photoreflectance and photoluminescence spectroscopy of low-temperature GaAs grown by molecular-beam epitaxy.
- Source :
-
Journal of Applied Physics . 1/1/1996, Vol. 79 Issue 1, p427. 6p. - Publication Year :
- 1996
-
Abstract
- Deals with a study which examined the photoreflectance and photoluminescence spectroscopy of low-temperature gallium arsenide grown by molecular-beam epitaxy. Information on modulation-doped photodectector structures; Methodology of the study; Results and discussion.
- Subjects :
- *PHOTOLUMINESCENCE
*PHOTOCHEMISTRY
*SPECTRUM analysis
*GALLIUM
*ARSENIC
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 79
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7659118
- Full Text :
- https://doi.org/10.1063/1.360848