Si-doped and undoped Ga1-xInxSb grown by molecular-beam epitaxy on GaAs substrates.

Describes the growth by molecular-beam epitaxy (MBE) and characterization of silicon-doped and unintentionally doped Ga[sub1-x]In[subx]Sb layers in the full compositional range on gallium arsenide substrates. Potential application for Ga[sub1-x]In[subx]Sb alloy; Analysis of the variation of the electrical properties with alloy composition; Information on the MBE system; Components of a correct transport-theoretical calculation of the carrier concentration from the Hall coefficient.