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Electrical properties of buried oxide–silicon interface.

Authors :
Dimitrakis, P.
Papaioannou, G. J.
Cristoloveanu, S.
Source :
Journal of Applied Physics. 8/1/1996, Vol. 80 Issue 3, p1605. 6p. 1 Diagram, 2 Charts, 9 Graphs.
Publication Year :
1996

Abstract

Presents a study that investigated the electrical properties of buried oxide-silicon interface. Information on the separation by implanted oxygen and deep level transient spectroscopy techniques; Experimental details; Results and discussion.

Subjects

Subjects :
*SILICON
*INTERFACES (Physical sciences)
*DEEP level transient spectroscopy

Details

Language :
English
ISSN :
00218979
Volume :
80
Issue :
3
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7658670
Full Text :
https://doi.org/10.1063/1.362958
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