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Structural characterization of ion-beam synthesized NiSi2 layers.
- Source :
-
Journal of Applied Physics . 8/1/1995, Vol. 78 Issue 3, p1707. 6p. 9 Graphs. - Publication Year :
- 1995
-
Abstract
- Focuses on the formation of nickel (Ni)-silicon (Si) layers with good crystalline quality by ion-beam synthesis. Use of Rutherford backscattering spectrometry and transmission electron microscopy; Structural difference between NiSi[sub2] and cobalt-Si; Overview of the x-ray diffraction measurements.
- Subjects :
- *SILICON compounds
*ION bombardment
*BACKSCATTERING
*X-ray diffraction
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 78
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7658563
- Full Text :
- https://doi.org/10.1063/1.360268