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Orientation-dependent growth of InGaAs/InP for applications in laser-diode arrays.
- Source :
-
Journal of Applied Physics . 11/1/1993, Vol. 74 Issue 9, p5516. 4p. 3 Black and White Photographs, 1 Diagram, 2 Graphs. - Publication Year :
- 1993
-
Abstract
- Presents a study which observed the growth of indium gallium arsenide (InGaAs)/indium phosphide (InP) for applications in laser-diode arrays by metalorganic vapor-phase epitaxy. Main growth features of the semiconductor; Thickness of the InP layers; Evaluation of the growth of InP and InGaAs on InP substrates.
- Subjects :
- *INDIUM phosphide
*ORGANOMETALLIC compounds
*EPITAXY
*LASER beams
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 74
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7657023
- Full Text :
- https://doi.org/10.1063/1.354208