InP on Si substrates characterized by spectroscopic ellipsometry.

Presents a study in which a spectroscopic ellipsometry was used to analyze the refractive index and the absorption coefficient of thin buffer layers of indium phosphide grown by metalorganic vapor phase epitaxy on silicon substrates. Influence on the crystallographic properties of the subsequently grown indium phosphide main layer; Cause of the increased optical absorption of the buffer layers; Description of the automated nulling setup used in the study.