Measurement of aluminum concentration in epitaxial films of AlxGa1-xAs on (110)- and (111)-oriented GaAs by double axis x-ray diffractometry.

Presents a study which determined the relationship between the aluminum mole fraction and the angular separation of film and substrate maxima in double axis x-ray diffraction rocking curves for strained epitaxial Al[subx]Ga[sub1-x]As films on (110)- and (111)-oriented gallium arsenide substrates. Details of how the films were grown; Values of the strained lattice parameter of the aluminum arsenide films normal to the wafer; Discussion of results.