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Gate current of modulation-doped field-effect transistors.

Authors :
Ruden, P. P.
Han, C. J.
Shur, M.
Source :
Journal of Applied Physics. 8/1/1988, Vol. 64 Issue 3, p1541. 6p. 7 Graphs.
Publication Year :
1988

Abstract

Presents a study which developed a room-temperature model for modulation-doped field-effect transistors and heterojunction insulated gate field-effect transitors that accounts for effects induced by the gate current at large gate voltages. Theory; Results and discussion; Conclusion.

Subjects

Subjects :
*TRANSISTORS
*SEMICONDUCTOR junctions

Details

Language :
English
ISSN :
00218979
Volume :
64
Issue :
3
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7656695
Full Text :
https://doi.org/10.1063/1.341830
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