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An investigation of the voltage-withstanding mechanism of BaTiO3 ceramic semiconductors.

Authors :
Li, Biao-rong
Gong, Shu-ping
Zhou, Dong-xiang
Source :
Journal of Applied Physics. 12/1/1987, Vol. 62 Issue 11, p4629. 3p. 1 Diagram, 1 Chart, 3 Graphs.
Publication Year :
1987

Abstract

Discusses a study which investigated the voltage-withstanding mechanism of BaTiO[sub3] ceramic semiconductors. Concept by which the mechanism can be explained; Voltage effect that will greatly reduce the voltage-withstanding ability; Problem with the application of a material under high voltage; Way of effectively reducing the voltage effect.

Details

Language :
English
ISSN :
00218979
Volume :
62
Issue :
11
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7656575
Full Text :
https://doi.org/10.1063/1.339008