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Thin heteroepitaxial Si-on-sapphire films grown at 600 °C by reactive ion beam deposition.
- Source :
-
Journal of Applied Physics . 11/1/1988, Vol. 64 Issue 9, p4509. 7p. 2 Black and White Photographs, 2 Diagrams, 4 Graphs. - Publication Year :
- 1988
-
Abstract
- Presents a study that investigated the heteroepitaxial growth of silicon thin films on sapphire at temperature. Analysis of the film growth through a fixed ion energy; Evaluation of the growth of the thin films by accommodating the ion energy to two film growth stages; Conclusions.
- Subjects :
- *EPITAXY
*THIN films
*SILICON
*SAPPHIRES
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 64
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7656454
- Full Text :
- https://doi.org/10.1063/1.341278