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Metalorganic chemical vapor deposition of InGaAsP/InP layers and fabrication of 1.3-μm planar buried heterostructure lasers.
- Source :
-
Journal of Applied Physics . 10/1/1988, Vol. 64 Issue 7, p3684. 5p. 1 Black and White Photograph, 3 Diagrams, 1 Chart, 8 Graphs. - Publication Year :
- 1988
-
Abstract
- Reports on the metalorganic chemical vapor deposition of InGaAsP/indium phosphide layers and fabrication of 1.3-μm planar buried heterostructure lasers. Investigation of the selective burying growth of indium phosphide on several types of mesas; Significance of metalorganic chemical vapor deposition; Growth conditions of indium phosphide and InGaAsP layers.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 64
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7655655
- Full Text :
- https://doi.org/10.1063/1.341411