Comparative studies of defects in GaAs on silicon substrates using electron-beam-induced current and transmission electron microscopy.

Discusses a study that dealt with the use of electron-beam-induced current imaging and transmission electron microscopy techniques to examine defects in heteroepitaxial films of gallium arsenide (GaAs) on silicon. Success in the use of the electron-beam-induced current method; Role of the electrically active defects in determining minority carrier lifetimes and diffusion lengths; Limitation in the application of GaAs on silicon technology.