A new maskless selective-growth process for InP on (100) Si.

Authors :: Tang, G.-P.
Peiner, E.
Wehmann, H.-H.
Lubnow, A.
Zwinge, G.
Schlachetzki, A.
Hergeth, J.
Source :: Journal of Applied Physics. 11/1/1992, Vol. 72 Issue 9, p4366. 3p. 3 Diagrams, 1 Chart, 1 Graph.
Publication Year :: 1992
Abstract: Presents a study that developed a new selective-growth process of indium phosphide on exactly (100)-oriented Si substrate in a conventional low-pressure metal-organic vapor-phase-epitaxy system. Details of the experiment; Results and discussion; Summary.