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Microstructural stability of epitaxial CoSi2/Si (001) interfaces.
- Source :
-
Journal of Applied Physics . 11/1/1991, Vol. 70 Issue 9, p4853. 4p. - Publication Year :
- 1991
-
Abstract
- Reports on the characterization of epitaxial films of cobalt silicide grown on (001) silicon (Si) molecular beam epitaxy by transmission electron microscopy. Preparation of the epitaxial layers; Information on the crystallographic stability.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 70
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7655346
- Full Text :
- https://doi.org/10.1063/1.349026