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Bonding and electrical properties of boron-doped microcrystalline SiNx:H films.
- Source :
-
Journal of Applied Physics . 8/15/1988, Vol. 64 Issue 4, p1931. 8p. - Publication Year :
- 1988
-
Abstract
- Presents information on a study which analyzed the effects brought about by the addition of nitrogen on the bonding properties as a function of the degree of crystallization for boron-doped microcrystalline into amorphous silicon nitride[subx]:hydrogen films. Investigation of the degree of crystallization by means of x-ray diffraction; Vibrational-absorption profiles; Electrical and optical properties.
- Subjects :
- *CRYSTALLIZATION
*BORON
*SEMICONDUCTOR doping
*AMORPHOUS substances
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 64
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7655281
- Full Text :
- https://doi.org/10.1063/1.341746