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Bonding and electrical properties of boron-doped microcrystalline SiNx:H films.

Authors :
Hasegawa, S.
Segawa, M.
Kurata, Y.
Source :
Journal of Applied Physics. 8/15/1988, Vol. 64 Issue 4, p1931. 8p.
Publication Year :
1988

Abstract

Presents information on a study which analyzed the effects brought about by the addition of nitrogen on the bonding properties as a function of the degree of crystallization for boron-doped microcrystalline into amorphous silicon nitride[subx]:hydrogen films. Investigation of the degree of crystallization by means of x-ray diffraction; Vibrational-absorption profiles; Electrical and optical properties.

Details

Language :
English
ISSN :
00218979
Volume :
64
Issue :
4
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7655281
Full Text :
https://doi.org/10.1063/1.341746