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Implanted boron depth profiles in the AZ111 photoresist.
- Source :
-
Journal of Applied Physics . 3/15/1988, Vol. 63 Issue 6, p2083. 3p. 2 Charts, 2 Graphs. - Publication Year :
- 1988
-
Abstract
- Presents information on a study which determined the depth distribution of ion-implanted [sup10]boron in AZ111 photoresist in the 30-150 kiloelectrovolts energy range. Aspects of ion-implanted and irradiated polymers; Experimental procedure; Results and discussion; Conclusions.
- Subjects :
- *ION implantation
*BORON
*PHOTORESISTS
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 63
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7654223