Characterization of haze-forming precipitates in silicon.

Presets a study which examined the defects leading to haze formation after diffusion of the transition metals cobalt, nickel, copper, and palladium by means of transmission electron microscopy and preferential etching. Experimental procedure; Result of the preferential etching of cobalt-diffuses silicon wafers; Formation of etch pits after preferential etching of nickel-diffused silicon wafers.