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A controllable mechanism of forming extremely low-resistance nonalloyed ohmic contacts to group III-V compound semiconductors.
- Source :
-
Journal of Applied Physics . 12/15/1993, Vol. 74 Issue 12, p7344. 13p. - Publication Year :
- 1993
-
Abstract
- Presents information on a study which established the formation mechanism and characterized extremely low-resistance nonalloyed titanium-platinum-gold contacts to indium and gallium compounds. Methods; Results; Discussion.
- Subjects :
- *ELECTRIC contacts
*TITANIUM
*PLATINUM
*GOLD
*INDIUM compounds
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 74
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7653469
- Full Text :
- https://doi.org/10.1063/1.355002