Strain effects in high-purity InP epilayers grown on slightly mismatched substrates.

Investigates the effect of small changes in the substrate lattice constant on the photoluminescence (PL) properties of high-purity nominally undoped InP epilayers. Effect of high concentrations of substitutional dopants; Comparison of low-temperature exciton PL spectra for two high-purity epilayers during the same growth run but on different semi-insulating substrates; Assessment of substrate lattice parameter variation due to substrate dopants.