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Generalized reciprocity theorem for semiconductor devices.

Authors :
Misiakos, K.
Lindholm, F. A.
Source :
Journal of Applied Physics. 12/15/1985, Vol. 58 Issue 12, p4743. 2p.
Publication Year :
1985

Abstract

Presents a reciprocity theorem that relates the short-circuit current of a device, induced by a carrier generation source, to the minority-carrier Fermi level in the dark. Analysis of the device in the dark; Calculation of the internal quantum efficiency of a solar cell; Practical significance of reciprocity.

Details

Language :
English
ISSN :
00218979
Volume :
58
Issue :
12
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7653176
Full Text :
https://doi.org/10.1063/1.336226