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Optical properties of high-quality InGaAs/InAlAs multiple quantum wells.

Authors :
Gupta, S.
Bhattacharya, P. K.
Pamulapati, J.
Mourou, G.
Source :
Journal of Applied Physics. 3/1/1991, Vol. 69 Issue 5, p3219. 7p. 3 Diagrams, 3 Graphs.
Publication Year :
1991

Abstract

Presents a study which examined the optical properties of indium gallium arsenide and indium aluminum arsenide multiple quantum wells. Growth of compounds from molecular beam epitaxy; Measurement of the compounds' photoluminescence; Application of a picosecond-time-correlated photoluminescence spectroscopy.

Subjects

Subjects :
*ARSENIDES
*QUANTUM wells
*MOLECULAR beam epitaxy
*PHOTOLUMINESCENCE

Details

Language :
English
ISSN :
00218979
Volume :
69
Issue :
5
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7652184
Full Text :
https://doi.org/10.1063/1.348540
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