Influence of deposition rate and hydrogen/helium dilution on the structural relaxation of a-SiGe:H network prepared at low substrate temperature.

Presents a study which developed device quality a-silicon germanide: hydrogen alloy at low substrate temperature suitable for solar-cell fabrication using low flow rate of silane and germane and strong hydrogen dilution. Discussion on the optoelectronic properties of a-silicon germanide: hydrogen films; Correlation between optoelectronic properties and structural properties and midgap defect densities; Comparison of the quantum efficiencies of several Schottky barrier devices.