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Crystal structure of Si1-xCx films by plasma-enhanced chemical vapor deposition at 700 °C.
- Source :
-
Journal of Applied Physics . 6/1/1991, Vol. 69 Issue 11, p7945. 3p. 4 Graphs. - Publication Year :
- 1991
-
Abstract
- Presents a study of the crystal structure and the bonding configurations of Si[sub1-x]C[subx] films prepared by plasma-enhanced chemical vapor deposition. Description of cubic silicon carbide; X-ray diffraction pattern on the films; Classification of films according to the composition.
- Subjects :
- *THIN films
*CRYSTALLOGRAPHY
*PLASMA-enhanced chemical vapor deposition
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 69
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7651690
- Full Text :
- https://doi.org/10.1063/1.347490