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Study of submicron InP transferred electron devices.
- Source :
-
Journal of Applied Physics . 7/1/1993, Vol. 74 Issue 1, p315. 12p. 4 Charts, 14 Graphs. - Publication Year :
- 1993
-
Abstract
- Deals with a study which investigated submicron indium phosphide transferred electron devices. Method used to model the direct current characteristics of near-micron structures; Background on the physical origins of the length effect in submicron structures; Description of the static characteristics of transferred electron devices.
- Subjects :
- *INDIUM phosphide
*ELECTRONS
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 74
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7651344
- Full Text :
- https://doi.org/10.1063/1.354110