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Characterization of Te-doped GaSb grown by molecular beam epitaxy using SnTe.

Authors :
Chen, J. F.
Cho, A. Y.
Source :
Journal of Applied Physics. 7/1/1991, Vol. 70 Issue 1, p277. 5p. 1 Chart, 5 Graphs.
Publication Year :
1991

Abstract

Analyzes the use of tin-tellurium as a source of donor impurities in the growth of n-type gallium-antimony by moleclar beam epitaxy. Details on the experiment; Effects of source temperature on tellurium incorporation; Electrical properties of tellurium-doped gallium-antimony epilayers.

Subjects

Subjects :
*TELLURIUM
*METAL inclusions
*GALLIUM
*ANTIMONY
*MOLECULAR beam epitaxy

Details

Language :
English
ISSN :
00218979
Volume :
70
Issue :
1
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7651108
Full Text :
https://doi.org/10.1063/1.350296
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