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Temperature dependence of electron mobility for inversion-mode InP metal-insulator-semiconductor field-effect transistors.
Temperature dependence of electron mobility for inversion-mode InP metal-insulator-semiconductor field-effect transistors.
- Source :
-
Journal of Applied Physics . 1/1/1987, Vol. 61 Issue 1, p277. 7p. 1 Diagram, 5 Graphs. - Publication Year :
- 1987
-
Abstract
- Presents a study which investigated the carrier transport of electrons in inversion-mode indium phosphide metal-insulator-semiconductor field-effect transistors (MISFET). Fabrication of the corbino-disc-type MISFET; Direct current characteristics and drain-source conductance; Dependence of mobility on induced electron density and temperature.
- Subjects :
- *METAL insulator semiconductors
*ELECTRONS
*FIELD-effect transistors
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 61
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7650772
- Full Text :
- https://doi.org/10.1063/1.338817