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Temperature dependence of electron mobility for inversion-mode InP metal-insulator-semiconductor field-effect transistors.

Temperature dependence of electron mobility for inversion-mode InP metal-insulator-semiconductor field-effect transistors.

Authors :
Hirota, Y.
Okamura, M.
Hisaki, T.
Yamaguchi, E.
Source :
Journal of Applied Physics. 1/1/1987, Vol. 61 Issue 1, p277. 7p. 1 Diagram, 5 Graphs.
Publication Year :
1987

Abstract

Presents a study which investigated the carrier transport of electrons in inversion-mode indium phosphide metal-insulator-semiconductor field-effect transistors (MISFET). Fabrication of the corbino-disc-type MISFET; Direct current characteristics and drain-source conductance; Dependence of mobility on induced electron density and temperature.

Details

Language :
English
ISSN :
00218979
Volume :
61
Issue :
1
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7650772
Full Text :
https://doi.org/10.1063/1.338817