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State distribution and ambipolar diffusion length in n-type hydrogenated amorphous silicon.

Authors :
Balberg, I.
Weisz, S. Z.
Source :
Journal of Applied Physics. 7/1/1989, Vol. 66 Issue 1, p215. 4p.
Publication Year :
1989

Abstract

Presents a study which measured the deep state distribution and the ambipolar diffusion length on the same n-type a-silicon:hydrogen materials. Concentration of active recombination centers; States around the midgap of phosphorous-doped material; Discussion of results.

Subjects

Subjects :
*DIFFUSION
*SILICON
*HYDROGEN
*RECOMBINATION in semiconductors

Details

Language :
English
ISSN :
00218979
Volume :
66
Issue :
1
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7648415
Full Text :
https://doi.org/10.1063/1.343908
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