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Heteroepitaxial growth of SiC polytypes.

Authors :
Yoshida, S.
Sakuma, E.
Okumura, H.
Misawa, S.
Endo, K.
Source :
Journal of Applied Physics. 7/1/1987, Vol. 62 Issue 1, p303. 3p. 1 Black and White Photograph, 1 Chart, 1 Graph.
Publication Year :
1987

Abstract

Presents a study that examined heteroepitaxial growth of silicon-carbon (SiC) polytypes, 3C- and 6hydrogen-SiC by chemical vapor deposition. Use of Raman spectra; Identification of the polytypes; Characteristic of the surfaces of 3C-SiC epilayers grown at high temperatures.

Subjects

Subjects :
*EPITAXY
*SILICON carbide
*CARBON
*HYDROGEN
*CHEMICAL vapor deposition

Details

Language :
English
ISSN :
00218979
Volume :
62
Issue :
1
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7647759
Full Text :
https://doi.org/10.1063/1.339147
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