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Measurement of an Exceptionally Weak Electron-Phonon Coupling on the Surface of the Topological Insulator Bi2Se3 Using Angle-Resolved Photoemission Spectroscopy.

Authors :
Pan, Z.-H.
Fedorov, A. V.
Gardner, D.
Lee, Y. S.
Chu, S.
Valla, T.
Source :
Physical Review Letters. 5/4/2012, Vol. 108 Issue 18, p1-5. 5p.
Publication Year :
2012

Abstract

Gapless surface states on topological insulators are protected from elastic scattering on nonmagnetic impurities which makes them promising candidates for low-power electronic applications. However, for widespread applications, these states should have to remain coherent at ambient temperatures. Here, we studied temperature dependence of the electronic structure and the scattering rates on the surface of a model topological insulator, Bi2Se3, by high-resolution angle-resolved photoemission spectroscopy. We found an extremely weak broadening of the topological surface state with temperature and no anomalies in the state's dispersion, indicating exceptionally weak electron-phonon coupling. Our results demonstrate that the topological surface state is protected not only from elastic scattering on impurities, but also from scattering on low-energy phonons, suggesting that topological insulators could serve as a basis for room-temperature electronic devices. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00319007
Volume :
108
Issue :
18
Database :
Academic Search Index
Journal :
Physical Review Letters
Publication Type :
Academic Journal
Accession number :
76477528
Full Text :
https://doi.org/10.1103/PhysRevLett.108.187001