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Mechanism of carrier transport in highly efficient solar cells having indium tin oxide/Si junctions.

Authors :
Kobayashi, H.
Ishida, T.
Nakato, Y.
Tsubomura, H.
Source :
Journal of Applied Physics. 2/1/1991, Vol. 69 Issue 3, p1736. 8p. 2 Diagrams, 6 Graphs.
Publication Year :
1991

Abstract

Presents a study that analyzed carrier transport mechanism of the silicon (Si) semiconductor solar cells with n-Si/indium tin oxide (ITO) junctions. Measurement of the current-voltage characteristics of the samples; Analysis of the conversion efficiency of the solar cells; Evaluation of the mechanism of charge transport of Si electrode covered with a thermally grown Si oxide layer where an ITO film is deposited.

Details

Language :
English
ISSN :
00218979
Volume :
69
Issue :
3
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7647124
Full Text :
https://doi.org/10.1063/1.347220