Iron redistribution and compensation mechanisms in semi-insulating Si-implanted InP.

Presents a study which measured the silicon and iron depth distributions in silicon-implanted semi-insulating indium phosphide as a function of implant temperature and post-implants annealing technique. Applications of indium phosphide in optoelectronic and microwave devices; Investigation of the initial crystalline quality; Redistribution of iron following room temperature implant of silicon and annealing.