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Low-temperature polycrystalline Si film growth on amorphous insulators by reactive ion beam deposition.
- Source :
-
Journal of Applied Physics . 2/1/1989, Vol. 65 Issue 3, p1106. 6p. 1 Diagram, 12 Graphs. - Publication Year :
- 1989
-
Abstract
- Investigates polycrystalline silicon growth on amorphous insulators by using the reactive ion beam deposition method. Types of amorphous insulators analyzed; Details of experimental procedures; Effects of growth temperature on polysilicon growth; Analysis of the effects of ion energy on polysilicon growth.
- Subjects :
- *POLYCRYSTALS
*SILICON
*AMORPHOUS substances
*ELECTRIC insulators & insulation
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 65
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7646931
- Full Text :
- https://doi.org/10.1063/1.343046