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Impurity defect interactions in GaAs.

Authors :
Stievenard, D.
Bourgoin, J. C.
Source :
Journal of Applied Physics. 2/1/1986, Vol. 59 Issue 3, p743. 5p. 4 Charts, 6 Graphs.
Publication Year :
1986

Abstract

Presents a study that irradiated Bulk Czochralski (CZ) and vapor phase epitaxy (VPE) layers of n gallium-arsenic with 1-MeV electrons. Dosage range of the electrons; Temperature range of the electrons; Number of defects detected in CZ and VPE.

Subjects

Subjects :
*EPITAXY
*ELECTRONS

Details

Language :
English
ISSN :
00218979
Volume :
59
Issue :
3
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7646096
Full Text :
https://doi.org/10.1063/1.336594
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