Defects and ion redistribution in implant-isolated GaAs-based device structures.

Authors :: Pearton, S. J.
Ren, F.
Chu, S. N. G.
Abernathy, C. R.
Hobson, W. S.
Elliman, R. G.
Source :: Journal of Applied Physics. 12/1/1993, Vol. 74 Issue 11, p6580. 7p. 6 Black and White Photographs, 3 Charts, 3 Graphs.
Publication Year :: 1993
Abstract: Presents a study which examined defects and ion redistribution in implant-isolated gallium arsenide based device structures. Technique for isolating elementary gallium arsenide-based devices; Concerns about post-implant anneal needed to achieve maximum resistivity in heterojunction bipolar transistor (HBT) structures; Layer structure of gallium arsenide/AlGaAs grown by metal organic molecular beam epitaxy.

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